What are some of the key differences between dry and wet etching processes in fabrication technology?

Dry and wet etching are both critical processes in fabrication technology, particularly in the manufacture of semiconductor devices. Here are some key differences:

• Dry Etching: Involves the removal of material through the use of reactive gases and plasma. This process provides better control over directionality and is known as anisotropic etching.
• Wet Etching: Employs liquid chemicals or acids to remove materials. It’s typically isotropic, meaning it etches in all directions, and is often used for bulk material removal or in applications where fine control over line width isn't as critical.

Examples of dry etching techniques include Reactive Ion Etching (RIE) and Plasma Etching, while examples of wet etching include Buffered Oxide Etch (BOE) and Potassium Hydroxide (KOH) etching for silicon.