When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in:

Related MCQs

• The width of depletion region of a varactor diode ________with increase in reverse bias voltage.
• an IMPATT diode, it results in:
• The number of semiconductor layers in IMPATT diode is:
• The resistance of the PIN diode with positive bias voltage:
• The resistance of the PIN diode with positive bias voltage
• GaAs is used in fabricating Gunn diode. Gunn diode is:
• The junction resistance and capacitance of the intrinsic region in a PIN diode are connected______ in the equivalent circuit of PIN diode.
• The material out of which PIN diode is made is:
• The mode of operation in which the Gunn diode is not stable is:
• A PIN diode consists of ______number of semiconductor layers.