The free electron concentration in N-type GaAs is controlled by:

Related MCQs

• GaAs is used in the fabrication of GUNN diodes because:
• In a GaAs n-type specimen, the current generated is constant irrespective of the electric filed applied to the specimen.
• When the electric field applied to GaAs specimen is less than the threshold electric field, the current in the material:
• GaAs is used in fabricating Gunn diode. Gunn diode is:
• When either a voltage or current is applied to the terminals of bulk solid state compound GaAs, a differential              is developed in that bulk device.
• The number of modes of operation for n type GaAs is:
• The material used to fabricate IMPATT diodes is GaAs since they have the highest efficiency in all aspects.
• In a Gunn diode oscillator, the electron drift velocity was found to be 107 cm/second and the effective length is 20 microns, then the intrinsic frequency is:
• In crossed field tubes, the electron beam traverses the length of the tube and is parallel to the electric field.
• In a                    oscillator, the RF wave travels along the helix from the collector towards the electron gun.