In a Gunn diode oscillator, the electron drift velocity was found to be 107 cm/second and the effective length is 20 microns, then the intrinsic frequency is:

Related MCQs

• The modes of operation of a Gunn diode are illustrated in a plot of voltage applied to the Gunn diode v/s frequency of operation of Gunn diode.
• If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is:
• If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is:
• If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is:
• In Gunn diode oscillator, the Gunn diode is inserted into a waveguide cavity formed by a short circuit termination at one end
• GaAs is used in fabricating Gunn diode. Gunn diode is:
• Colpitts oscillator in the feedback section has an inductance of 4 mH and capacitors of 12 nH and 4 nH. Then the resonant frequency of Colpitts oscillator is:
• In a diode frequency multiplier, an input signal of frequency fo applied to the diode is terminated with                   at all frequencies other than required harmonic.
• The frequency of oscillation in Gunn diode is given by:
• In the plot of reactance v/s frequency of a crystal oscillator, the reactance between series resonant frequency and parallel resonant frequency is: