McqMate

Q. |
## From the given circuit, using silicon BJT, what is the value of the saturation collector current? |

A. | 5 ma |

B. | 5.36 ma |

C. | 5.45 ma |

D. | 10.9 ma |

Answer» B. 5.36 ma | |

Explanation: to obtain an approximate answer, under saturation the bjt is on and hence acts like a short circuit. however, ideally a drop exists for the transistor which is a fixed value. for an exact answer, if the bjt is a silicon transistor, then drop vce = 0.2v and current is 12-0.2/2.2=5.36 ma. |

759

0

Do you find this helpful?

1

View all MCQs in

Electronic Circuits 1No comments yet

- In the given circuit using a silicon BJT, what is the value of saturation collector current?
- From the given circuit, using a silicon BJT, what is the value of VCEQ?
- From the given circuit, using a silicon BJT, what is the value of VBC?
- In the given circuit, using a silicon BJT, what is the value of VCE?
- In the given circuit, what is the value of VE when using a silicon BJT?
- In the given circuit, what is the value of IC if the BJT is made of Silicon?
- The base current for a BJT remains constant at 5mA, the collector current changes from 0.2mA to 0.3 mA and beta was changed from 100 to 110, then calculate the value of S.
- From the given circuit, using a silicon transistor, what is the value of IBQ?
- For the BJT, β=∞, VBEon=0.7V VCEsat=0.7V. The switch is initially closed. At t=0, it is opened. At which time the BJT leaves the active region?
- Increase in collector emitter voltage from 5V to 8V causes increase in collector current from 5mA to 5.3mA. Determine the dynamic output resistance.