[Solved] In the internal structure of a MOSFET, a parasitic BJT exists between the

McqMate

Q.	In the internal structure of a MOSFET, a parasitic BJT exists between the
A.	source & gate terminals
B.	source & drain terminals
C.	drain & gate terminals
D.	there is no parasitic bjt in mosfet
Answer» B. source & drain terminals
Explanation: examine the internal structure of a mosfet, notice the n-p-n structure between the drain & source. a p-channel mosfet will have a p-n-p structure.

2.6k

0

Do you find this helpful?

8

View all MCQs in

Electronic Circuits 1

Discussion

No comments yet

Related MCQs

For the BJT, β=∞, VBEon=0.7V VCEsat=0.7V. The switch is initially closed. At t=0, it is opened. At which time the BJT leaves the active region?
In a simple follower stage, C2 is a parasitic capacitance arising due to the depletion region between the collector and the substrate. What is the value of C2?
During high frequency applications of a B.J.T., which parasitic capacitors arise between the base and the emitter?
During high frequency applications of a B.J.T., which parasitic capacitors arise between the collector and the emitter?
During high frequency applications of a B.J.T, which parasitic capacitors arise between the collector and the base?
Which of the following is the correct relationship between base and emitter current of a BJT?
Which parasitic capacitors do not affect the frequency response of the C.E. stage, of the B.J.T.?
Which parasitic capacitors don’t affect the frequency response of the C.B. stage of the B.J.T.?
Which parasitic capacitors don’t affect the frequency response of the C.C. stage of the B.J.T.?
To bias a e-MOSFET