The external power efficiency of an injection laser with a GaAs is 13% having band gap energy of 1.64 eV. Determine external power efficiency

Related MCQs

• The total efficiency of an injection laser with GaAs active region is 12%. The applied voltage is 3.6 V and band gap energy for GaAs is 2.34 eV. Determine external power efficiency.
• A GaAs injection laser with an optical cavity has refractive index of 3.6. Calculate the reflectivity for normal incidence of the plane wave on the GaAs-air interface.
• A planar LED is fabricated from GaAs is having a optical power emitted is 0.018% of optical power generated internally which is 0.018% of optical power generated internally which is 0.6 P. Determine external power efficiency.
• An injection laser has active cavity losses of 25 cm-1and the reflectivity of each laser facet is 30%. Determine the laser gain coefficient for the cavity it has a length of 500μm.
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• A GaAs injection laser has a threshold current density of 2.5*103Acm-2and length and width of the cavity is 240μmand 110μm respectively. Find the threshold current for the device.
• A GaAs optical source having a refractive index of 3.2 is coupled to a silica fiber having a refractive index of 1.42. Determine Fresnel reflection at interface in terms of percentage.
• Determine coupling efficiency into the fiber when GaAs LED is in close proximity to fiber core having numerical aperture of 0.3
• The parameters having a major role in determining threshold current of efficiency of injection laser are:
• Buried hetero-junction (BH) device is a type of _____________ laser where the active volume is buried in a material of wider band-gap and lower refractive index.