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| Q. |
3 IMPATT DIODES, SCHOTTKY BARRIER DIODES, PIN DIODES |
| A. | avalanche multiplication |
| B. | break down of depletion region |
| C. | high reverse saturation current |
| D. | none of the mentioned |
| Answer» A. avalanche multiplication | |
| Explanation: a reverse bias voltage exceeding the breakdown voltage is applied to an impatt diode, a high electric field appears across the n+ p junction. this high field imparts sufficient energy to the holes and also to valence electrons to raise themselves to the conduction band. this results in avalanche multiplication of electron hole pair. | |
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