To prevent an IMPATT diode from burning, a constant bias source is used to maintain                at safe limit.

Related MCQs

• If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is:
• The modes of operation of a Gunn diode are illustrated in a plot of voltage applied to the Gunn diode v/s frequency of operation of Gunn diode.
• The number of semiconductor layers in IMPATT diode is:
• The resonant frequency of an IMPATT diode is given by:
• If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is:
• If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to
• GaAs is used in fabricating Gunn diode. Gunn diode is:
• In a diode frequency multiplier, an input signal of frequency fo applied to the diode is terminated with                   at all frequencies other than required harmonic.
• In Gunn diode oscillator, the Gunn diode is inserted into a waveguide cavity formed by a short circuit termination at one end
• The material used to fabricate IMPATT diodes is GaAs since they have the highest efficiency in all aspects.