McqMate

Q. |
## In the given situation for n-channel JFET, we get drain-to-source current is 5mA. What is the current when VGS = – 6V? |

A. | 5 ma |

B. | 0.5a |

C. | 0.125 a |

D. | 0.5a |

Answer» C. 0.125 a | |

Explanation: ids = idss(1-vgs/vp)2 when vgs = 0, idss = ids = 5ma when vgs = -6v, ids = 5ma(1 + 4)2 ids = 5 x 25 = 125 ma. |

1.8k

0

Do you find this helpful?

17

View all MCQs in

Electronic Circuits 1No comments yet

- 7 BIASING BJT SWITCHING CIRCUITSJFET - DC LOAD LINE AND BIAS POINT, VARIOUS BIASING METHODS OF JFET - JFET BIAS CIRCUIT DESIGN
- The base current for a BJT remains constant at 5mA, the collector current changes from 0.2mA to 0.3 mA and beta was changed from 100 to 110, then calculate the value of S.
- Given that IB = 5mA and hfe = 55, find load current.
- Increase in collector emitter voltage from 5V to 8V causes increase in collector current from 5mA to 5.3mA. Determine the dynamic output resistance.
- Find the maximum value of gm for FET with IDSS=10mA, Vp=-2V, VGS=5V?
- In a small signal equivalent model of an FET, What does gm VGS stand for?
- Determine the value of output impedance for JFET, if the value of gm =1mS?
- In a Darlington pair, the overall β=15000.β1=100. Calculate the collector current for Q2 given base current for Q1 is 20 μA.
- For a fixed bias circuit the drain current was 1mA, what is the value of source current?
- From the given circuit, using silicon BJT, what is the value of the saturation collector current?