McqMate
| Q. |
The techniques by Burros and Dawson in reference to ho*mo structure device is to use an etched well in GaAs structure. |
| A. | true |
| B. | false |
| Answer» A. true | |
| Explanation: burros and dawson provided a technique to restrict emission to small active region within device thus providing high radiance. etched well in a gaas substrate is used to prevent heavy absorption of emitted region and physically accommodating the fiber. these structures provide low thermal impedance allowing high current densities of high radiance. | |
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