The energy-level occupation for a semiconductor in thermal equilibrium is described by the

Related MCQs

• _________ semiconductor laser sources generally have broader bandwidths.
• A semiconductor laser crystal of length 5 cm, refractive index 1.8 is used as an optical source. Determine the frequency separation of the modes.
• When did the non-semiconductor laser developed?
• A perfect semiconductor crystal containing no impurities or lattice defects is called as
• What is done to create an extrinsic semiconductor?
• The majority of the carriers in a p-type semiconductor are__________.
• Calculate the radioactive minority carrier lifetime in gallium arsenide when the minority carriers are electrons injected into a p-type semiconductor region which has a hole concentration of 1018cm-3. The recombination coefficient for gallium arsenide is
• In semiconductor injection laser, narrow line bandwidth is of the order
• The semiconductor lasers employing the distributed feedback mechanism are classified in _________________ categories
• Intensity of output from semiconductor injection lasers leading to optical intensity noise is due to