A double-channel planar buried hetero-structure (DCP BH) has a planar active region, the confinement material is

Related MCQs

• Buried hetero-junction (BH) device is a type of _____________ laser where the active volume is buried in a material of wider band-gap and lower refractive index.
• For suitable power confinement of fundamental mode, the normalized frequency v should be maintained in the range 1.5 to 2.4μm and the fractional index difference must be linearly increased as a square function while the core diameter is linearly reduced to keep v constant. This confinement is achieved by-
• Better confinement of optical mode is obtained in
• In Buried hetero-junction (BH) lasers, the optical field is confined within
• A planar LED fabricated from GaAs has a refractive index of 2.5. Compute the optical power emitted when transmission factor is 0.68.
• The total efficiency of an injection laser with GaAs active region is 12%. The applied voltage is 3.6 V and band gap energy for GaAs is 2.34 eV. Determine external power efficiency.
• A particular laser structure is designed so that the active region extends the edges of devices. State whether the following statement is true or false.
• Determine the total carrier recombination lifetime of a double heterojunction LED where the radioactive and nonradioactive recombination lifetime of minority carriers in active region are 70 ns and 100 ns respectively.
• The InGaAsP/InP double channel planar DFB-BH laser with a quarter wavelength shifted first order grating provides a single frequency operation and incorporates a phase shift of ______________
• A planar LED is fabricated from GaAs is having a optical power emitted is 0.018% of optical power generated internally which is 0.018% of optical power generated internally which is 0.6 P. Determine external power efficiency.