The process where the energy released during the recombination of an electron-hole event getting transferred to another carrier is known as

Related MCQs

• Determine the total carrier recombination lifetime of a double heterojunction LED where the radioactive and nonradioactive recombination lifetime of minority carriers in active region are 70 ns and 100 ns respectively.
• Determine the internal quantum efficiency generated within a device when it has a radiative recombination lifetime of 80 ns and total carrier recombination lifetime of 40 ns.
• Calculate the radioactive minority carrier lifetime in gallium arsenide when the minority carriers are electrons injected into a p-type semiconductor region which has a hole concentration of 1018cm-3. The recombination coefficient for gallium arsenide is
• The parameter that prevents carrier from recombination is
• When a constant d.c. drive current is applied to device, the optical o/p power is 320 μm. Determine optical o/p power when device is modulated at frequency 30 MHz with minority carrier recombination lifetime of LED i.e. 5ns.
• The optical power at 20 MHz is 246.2 μW. Determine dc drive current applied to device with carrier recombination lifetime for LED of 6ns.
• The frequency of the absorbed or emitted radiation is related to difference in energy E between the higher energy state E2 and the lower energy state E1. State what h stands for in the given equation?
• Stimulated emission by recombination of injected carriers is encouraged in
• Auger recombination can be reduced by using
• Injection lasers operating in smaller wavelengths are subjected to increased carrier losses. State whether the following statement is true or false?