Stimulated emission by recombination of injected carriers is encouraged in

Related MCQs

• Calculate the radioactive minority carrier lifetime in gallium arsenide when the minority carriers are electrons injected into a p-type semiconductor region which has a hole concentration of 1018cm-3. The recombination coefficient for gallium arsenide is
• Determine the total carrier recombination lifetime of a double heterojunction LED where the radioactive and nonradioactive recombination lifetime of minority carriers in active region are 70 ns and 100 ns respectively.
• An incandescent lamp is operating at a temperature of 1000K at an operating frequency of 5.2×1014 Hz. Calculate the ratio of stimulated emission rate to spontaneous emission rate.
• Determine the internal quantum efficiency generated within a device when it has a radiative recombination lifetime of 80 ns and total carrier recombination lifetime of 40 ns.
• __________________ in the laser occurs when photon colliding with an excited atom causes the stimulated emission of a second photon.
• The radiation emission process (emission of a proton at frequency) can occur in __________ ways.
• A DH surface emitter LED has an emission area diameter of 60μm. Determine emission area of source
• The majority of the carriers in a p-type semiconductor are__________.
• The process where the energy released during the recombination of an electron-hole event getting transferred to another carrier is known as
• Auger recombination can be reduced by using