Replacing Sn with Eu, Cd or Ge in some _________________ the band gap.

Related MCQs

• The periodic arrangement of cladding air holes in photonic band gap fibers provides for the formation of a photonic band gap in the
• A ho*mo-junction is an interface between two adjoining single-crystal semiconductors with different band-gap energies. State whether the given statement is true or false.
• The total efficiency of an injection laser with GaAs active region is 12%. The applied voltage is 3.6 V and band gap energy for GaAs is 2.34 eV. Determine external power efficiency.
• The external power efficiency of an injection laser with a GaAs is 13% having band gap energy of 1.64 eV. Determine external power efficiency
• Buried hetero-junction (BH) device is a type of _____________ laser where the active volume is buried in a material of wider band-gap and lower refractive index.
• Auger current is mostly ___________________ for material with band gap providing longer wavelength emission.
• Fiber mostly suited in single-wavelength transmission in O-band is
• A technique based on inter-sub band transition is known as
• An alternative modification of the dispersion characteristics of single mode fibers involves achievement of low dispersion gap over the low-loss wavelength region between –
• In a GaAs LED, compute the loss relative to internally generated optical power in the fiber when there is small air gap between LED and fiber core. (Fiber coupled = 5.5 * 10-4Pint)