An essential requirement for the BARITT diode is that the intermediate drift region be completely filled to cause the punch through to occur.

Related MCQs

• If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is:
• If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is:
• The modes of operation of a Gunn diode are illustrated in a plot of voltage applied to the Gunn diode v/s frequency of operation of Gunn diode.
• In a Gunn diode oscillator, the electron drift velocity was found to be 107 cm/second and the effective length is 20 microns, then the intrinsic frequency is:
• In a diode frequency multiplier, an input signal of frequency fo applied to the diode is terminated with                   at all frequencies other than required harmonic.
• GaAs is used in fabricating Gunn diode. Gunn diode is:
• In Gunn diode oscillator, the Gunn diode is inserted into a waveguide cavity formed by a short circuit termination at one end
• In transistor oscillators, the requirement of a negative resistance device is satisfied using a varactor diode.
• The electrodes of a Gunn diode are made of:
• The mode of operation in which the Gunn diode is not stable is: