_________________ is a technique used to render the non-conducting material around the active cavity by producing permanent defects in the implanted area

Related MCQs

• An injection laser has active cavity losses of 25 cm-1and the reflectivity of each laser facet is 30%. Determine the laser gain coefficient for the cavity it has a length of 500μm.
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• Buried hetero-junction (BH) device is a type of _____________ laser where the active volume is buried in a material of wider band-gap and lower refractive index.
• A double-channel planar buried hetero-structure (DCP BH) has a planar active region, the confinement material is
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• A GaAs injection laser has a threshold current density of 2.5*103Acm-2and length and width of the cavity is 240μmand 110μm respectively. Find the threshold current for the device.
• A GaAs injection laser with an optical cavity has refractive index of 3.6. Calculate the reflectivity for normal incidence of the plane wave on the GaAs-air interface.