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| Q. |
The high density FLASH memory cell is implemented using |
| A. | 1 floating-gate mos transistor |
| B. | 2 floating- gate mos transistors |
| C. | 4 floating- gate mos transistors |
| D. | 6 floating- gate mos transistors |
| Answer» A. 1 floating-gate mos transistor | |
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