Q. |
The high density FLASH memory cell is implemented using |
A. | 1 floating-gate mos transistor |
B. | 2 floating- gate mos transistors |
C. | 4 floating- gate mos transistors |
D. | 6 floating- gate mos transistors |
Answer» A. 1 floating-gate mos transistor |
Login to Continue
It will take less than 2 minutes