Q.

The width of depletion layer of a P-N junction –

A. decreases with light doping
B. increases with heavy doping
C. is independent of applied voltage
D. is increased under reverse bias
Answer» D. is increased under reverse bias
Explanation: The total width of the depletion region is a function of applied reverse-bias and impurity concentration. Forward bias decreases the depletion region width whilst reverse bias increases it.
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