McqMate
These multiple-choice questions (MCQs) are designed to enhance your knowledge and understanding in the following areas: Electrical Engineering .
| 101. |
the imperfection sin crystal structure influence the of materials |
| A. | electrical conductivity |
| B. | density |
| C. | strength |
| D. | all of the above |
| Answer» D. all of the above | |
| 102. |
the effect of imperfections in crystal struture can be |
| A. | desirable |
| B. | adverse |
| C. | both a or b |
| D. | none of the above |
| Answer» C. both a or b | |
| 103. |
due to change in mechanical properties of the material can be changed |
| A. | color |
| B. | shape |
| C. | imperfectio ns |
| D. | none of the above |
| Answer» C. imperfectio ns | |
| 104. |
imperfections are introduced during |
| A. | plastic deformation |
| B. | metal forming |
| C. | heat treatment |
| D. | all of the above |
| Answer» D. all of the above | |
| 105. |
vacancy, self interstitial, substitutional are all types of |
| A. | line defects |
| B. | surface defects |
| C. | voliume defects |
| D. | point defects |
| Answer» D. point defects | |
| 106. |
point defects include |
| A. | vacancy, substitution al, edge dislocations |
| B. | substitution al, edge dislocation, grain boundaries |
| C. | substitution al, edge dislocation ,stacking faults |
| D. | vacancy, substitution al, interstitial defects |
| Answer» D. vacancy, substitution al, interstitial defects | |
| 107. |
line defects include |
| A. | edge and screw dislocation |
| B. | edge dislocations and grain boundaries |
| C. | screw dislocations and stacking faults |
| D. | vacancy, substitution al, interstitial |
| Answer» A. edge and screw dislocation | |
| 108. |
surface defects includes |
| A. | edge and screw dislocation |
| B. | edge dislocations and grain boundaries |
| C. | grain boundaries, twin boundaries, lattice vibrations |
| D. | grain boundaries, twin boundaries, low angle boundary |
| Answer» D. grain boundaries, twin boundaries, low angle boundary | |
| 109. |
whioch of the following is not line defect ? |
| A. | dislocation |
| B. | low angle grain boundary |
| C. | schottky |
| D. | both b and c |
| Answer» D. both b and c | |
| 110. |
which of the following is line defect ? |
| A. | dislocation |
| B. | low angle grain boundary |
| C. | schottky |
| D. | both b and c |
| Answer» A. dislocation | |
| 111. |
which of the following defect is not surface defect ? |
| A. | dislocation |
| B. | low angle grain boundary |
| C. | schottky |
| D. | both b and c |
| Answer» D. both b and c | |
| 112. |
which of the following is a type of surface defect ? |
| A. | dislocation |
| B. | low angle grain boundary |
| C. | schottky |
| D. | both b and c |
| Answer» B. low angle grain boundary | |
| 113. |
lattice vibration affects the properties of material |
| A. | electrical |
| B. | magnetic |
| C. | thermal |
| D. | all of the above |
| Answer» D. all of the above | |
| 114. |
atoms are bonded with each other through bond |
| A. | covalent |
| B. | ionic |
| C. | both a and b |
| D. | a or b |
| Answer» D. a or b | |
| 115. |
the bonding between atoms breaks due to the |
| A. | reduction in energy possesed by them |
| B. | increase in energy possesed by them |
| C. | chemical reaction |
| D. | none of the above |
| Answer» B. increase in energy possesed by them | |
| 116. |
vacancy defect is assocoated with |
| A. | atom leaves its position and locates in the interstitial sites |
| B. | missing of an atom from its designated position |
| C. | foreign atom occupies the interstitial sites |
| D. | both a and b |
| Answer» D. both a and b | |
| 117. |
any atom when leaves its position and occupies the interstitial sites is called as |
| A. | slf interstitial |
| B. | interstitial |
| C. | both of the above |
| D. | none of the above |
| Answer» A. slf interstitial | |
| 118. |
when any atom occupies the interstitial position of material increases |
| A. | strength |
| B. | hardness |
| C. | both of the above |
| D. | none of the above |
| Answer» A. strength | |
| 119. |
when any atom occupies the interstitial position of material increases |
| A. | strength |
| B. | hardness |
| C. | both of the above |
| D. | none of the above |
| Answer» C. both of the above | |
| 120. |
substitutional impurity defect is associated with |
| A. | atom leaves its posiiton and locates in the interstitial sites |
| B. | foreign atom occupies the lattice posiiton of regular atomic structure |
| C. | foreign atom occupies the interstitial sites |
| D. | missing of an atom from its designated position |
| Answer» B. foreign atom occupies the lattice posiiton of regular atomic structure | |
| 121. |
Frenkel defect is associated with |
| A. | vacancy and self interstitial defect |
| B. | vacancy and substitution al defect |
| C. | substitution al and self intestitial defect |
| D. | none of the above |
| Answer» A. vacancy and self interstitial defect | |
| 122. |
if an anion and cation are absent in pair the defect is known as |
| A. | schottky |
| B. | vacancy |
| C. | substitution al |
| D. | frenkel |
| Answer» A. schottky | |
| 123. |
point defect increase and decrease |
| A. | hardness, electrical conductivity |
| B. | electrical conductivity , hardness |
| C. | hardness, electrical resistance |
| D. | electrical resistance, hardness |
| Answer» A. hardness, electrical conductivity | |
| 124. |
the defect associated with addition / missing / misalighnment of a series of atoms from its designated posiiton is called as |
| A. | point defect |
| B. | linear defect |
| C. | surface defect |
| D. | none of the above |
| Answer» B. linear defect | |
| 125. |
the linear defects are introduced in the material during _ of material |
| A. | solidificatio n |
| B. | heat treatment |
| C. | plastic deformation |
| D. | all of the above |
| Answer» D. all of the above | |
| 126. |
burgers vector |
| A. | is a measure of lattice distortion |
| B. | is a measure of lattice distortion and is measured as distance along the close packed directions |
| C. | stacking faults |
| D. | none of the above |
| Answer» B. is a measure of lattice distortion and is measured as distance along the close packed directions | |
| 127. |
a measure of lattice distortion which is measured as a distance along the close packed directions |
| A. | burgers vector |
| B. | barbas vector |
| C. | any one of above |
| D. | none of the above |
| Answer» A. burgers vector | |
| 128. |
the magnitude of lattice distortion in edge dislocation si near the dislocation as compared to region away from dislocation |
| A. | constant |
| B. | lower |
| C. | higher |
| D. | varies randomly |
| Answer» C. higher | |
| 129. |
the magnitude of edge dislocation in a lattice structure can be measured by |
| A. | miller indices |
| B. | burgers vector |
| C. | microscope |
| D. | none of the above |
| Answer» B. burgers vector | |
| 130. |
linear defects increase and Decrease |
| A. | hardness, electrical conductivity |
| B. | electrical conductivity , hardness |
| C. | hardness, electrical resistance |
| D. | electrical resistance, hardness |
| Answer» C. hardness, electrical resistance | |
| 131. |
surface defects are |
| A. | one dimensional defect |
| B. | two dimensional defect |
| C. | theree dimensional defect |
| D. | none of the above |
| Answer» B. two dimensional defect | |
| 132. |
surafec defects are associated with |
| A. | defects within same crystal structure with different orientation of atomic planes |
| B. | defects within adjacent region consisting of different crystal structure |
| C. | defects within adjacent region consisting of same crystal structure |
| D. | any of the above |
| Answer» D. any of the above | |
| 133. |
the surface defects are introduced in the material during of material |
| A. | solidificatio n |
| B. | heat treatment |
| C. | plastic deformation |
| D. | all of the above |
| Answer» D. all of the above | |
| 134. |
the is defect that causes sepeartion of grain |
| A. | grain boundary |
| B. | twin boundary |
| C. | stacking faults |
| D. | none of the above |
| Answer» A. grain boundary | |
| 135. |
a garin boundary represents |
| A. | one dimensional defect |
| B. | zero dimensional defect |
| C. | two dimenstiona l defect |
| D. | none of the above |
| Answer» C. two dimenstiona l defect | |
| 136. |
a garin boundary is a transition region which represents _ |
| A. | imperfectio ns in arrengement of atoms |
| B. | foreign atom located in th region |
| C. | region with unique crystal structure |
| D. | none of the above |
| Answer» A. imperfectio ns in arrengement of atoms | |
| 137. |
the defect which has mirror image of atomic arrangement across the dislocation is called |
| A. | grain boundary defect |
| B. | stacking faults |
| C. | low angle boundary defect |
| D. | twin boundary defect |
| Answer» D. twin boundary defect | |
| 138. |
the twin is the region |
| A. | before and after the dialocation |
| B. | between the atomic arrangmnets that has formed mirror image |
| C. | low angle boundary defect |
| D. | twin boundary defect |
| Answer» D. twin boundary defect | |
| 139. |
in a given material adjacent grains will have |
| A. | same crystal structure |
| B. | different crystal |
| C. | same crystal structure |
| D. | a or b |
| Answer» D. a or b | |
| 140. |
the defect associated with slight mismatch of crystalline orientation from one grain to adjacent grain is called |
| A. | gtrain boundaries defect |
| B. | twinn boundaries defect |
| C. | low angle boundary defect |
| D. | stacking faults |
| Answer» C. low angle boundary defect | |
| 141. |
the low angle boundary defect is assocaited with |
| A. | high mismatch of crystalline orientation from one grain to adjacent grain |
| B. | slight mismatch of crystalline orientation from one grain to adjacent grain |
| C. | stacking mismatch of atomic planes |
| D. | stacking faults |
| Answer» D. stacking faults | |
| 142. |
the stacking fault defect is assocaited with |
| A. | erroe in sequence of close- packed atomic planes |
| B. | slight mismatch of crystalline orientation from one grain to adjacent grain |
| C. | error in stacking of electrons in atomic structure |
| D. | none of the above |
| Answer» A. erroe in sequence of close- packed atomic planes | |
| 143. |
surface defects increase and decrease |
| A. | hardness & strength |
| B. | hardness and electrical conductivity |
| C. | hardness and corrosion resistance |
| D. | none of the above |
| Answer» A. hardness & strength | |
| 144. |
vacancies are known as _ |
| A. | one dimensional defect |
| B. | zero dimensional defect |
| C. | two dimenstiona l defect |
| D. | none of the above |
| Answer» B. zero dimensional defect | |
| 145. |
dislocations are known as |
| A. | one dimensional defect |
| B. | zero dimensional defect |
| C. | two dimenstiona l defect |
| D. | none of the above |
| Answer» A. one dimensional defect | |
| 146. |
in positive edge dislocation |
| A. | extra row of atoms is present in the upper region |
| B. | extra row of atoms is present in lower region |
| C. | any one of above |
| D. | none of the above |
| Answer» A. extra row of atoms is present in the upper region | |
| 147. |
in positive edge dislocation |
| A. | the region in dislocation is under |
| B. | the region in dislocation is under |
| C. | the region in dislocation is under |
| D. | none of the above |
| Answer» B. the region in dislocation is under | |
| 148. |
the dislocations are classified as |
| A. | edge dislocation |
| B. | screw dislocation |
| C. | positive and negative edge dislocation |
| D. | all of the above |
| Answer» D. all of the above | |
| 149. |
in screw dislocation |
| A. | the region in dislocation is under tension and below is under compression |
| B. | the region in dislocation is under compression and below is under tension |
| C. | the region in dislocation is under shear |
| D. | none of the above |
| Answer» C. the region in dislocation is under shear | |
| 150. |
when the metal is stresses below its elastic limit, the resulting deformation is |
| A. | permenant |
| B. | temporary |
| C. | partially permenant |
| D. | none of the above |
| Answer» B. temporary | |
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