420+ Digital Electronics Solved MCQs

These multiple-choice questions (MCQs) are designed to enhance your knowledge and understanding in the following areas: Electrical Engineering , Bachelor of Science in Computer Science FY (BSc CS) , Bachelor of Computer Applications (BCA) , Bachelor of Science in Computer Science (BSc CS) .

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351.	Fusing process is
A.	reversible
B.	irreversible
C.	synchronous
D.	asynchronous
Answer» B. irreversible

352.	The cell type used inside a PROM is
A.	link cells
B.	metal cells
C.	fuse cells
D.	electric cells
Answer» C. fuse cells

353.	How many types of fuse technologies are used in PROMs?
A.	2
B.	3
C.	4
D.	5
Answer» B. 3

354.	Metal links are made up of
A.	polycrystalline
B.	magnesium sulphide
C.	nichrome
D.	silicon dioxide
Answer» C. nichrome

355.	EPROM uses an array of
A.	p-channel enhancement type mosfet
B.	n-channel enhancement type mosfet
C.	p-channel depletion type mosfet
D.	n-channel depletion type mosfet
Answer» B. n-channel enhancement type mosfet

356.	The EPROM was invented by
A.	wen tsing chow
B.	dov frohman
C.	luis o brian
D.	j p longwell
Answer» B. dov frohman

357.	Address decoding for dynamic memory chip control may also be used for
A.	chip selection and address location
B.	read and write control
C.	controlling refresh circuits
D.	memory mapping
Answer» A. chip selection and address location

358.	Which of the following describes the action of storing a bit of data in a mask ROM?
A.	a 0 is stored by connecting the gate of a mos cell to the address line
B.	a 0 is stored in a bipolar cell by shorting the base connection to the address line
C.	a 1 is stored by connecting the gate of a mos cell to the address line
D.	a 1 is stored in a bipolar cell by opening the base connection to the address line
Answer» C. a 1 is stored by connecting the gate of a mos cell to the address line

359.	The check sum method of testing a ROM
A.	allows data errors to be pinpointed to a specific memory location
B.	provides a means for locating and correcting data errors in specific memory locations
C.	indicates if the data in more than one memory location is incorrect
D.	simply indicates that the contents of the rom are incorrect
Answer» D. simply indicates that the contents of the rom are incorrect

360.	The initial values in all the cells of an EPROM is
A.	0
B.	1
C.	both 0 and 1
D.	alternate 0s and 1s
Answer» B. 1

361.	To store 0 in such a cell, the floating point must be
A.	reprogrammed
B.	restarted
C.	charged
D.	power off
Answer» C. charged

362.	The major disadvantage of RAM is?
A.	its access speed is too slow
B.	its matrix size is too big
C.	it is volatile
D.	high power consumption
Answer» C. it is volatile

363.	Which one of the following is used for the fabrication of MOS EPROM?
A.	tms 2513
B.	tms 2515
C.	tms 2516
D.	tms 2518
Answer» C. tms 2516

364.	How many addresses a MOS EPROM have?
A.	1024
B.	512
C.	2516
D.	256
Answer» C. 2516

365.	To read from the memory, the select input and the power down/program input must be
A.	high
B.	low
C.	sometimes high and sometimes low
D.	alternate high and low
Answer» B. low

366.	ROMs retain data when
A.	power is on
B.	power is off
C.	system is down
D.	all of the mentioned
Answer» D. all of the mentioned

367.	When a RAM module passes the checker board test it is
A.	able to read and write only 0s
B.	faulty
C.	probably good
D.	able to read and write only 1s
Answer» C. probably good

368.	What is the difference between static RAM and dynamic RAM?
A.	static ram must be refreshed, dynamic ram does not
B.	there is no difference
C.	dynamic ram must be refreshed, static ram does not
D.	sram is slower than dram
Answer» C. dynamic ram must be refreshed, static ram does not

369.	What is access time?
A.	the time taken to move a stored word from one bit to other bits after applying the address bits
B.	the time taken to write a word after applying the address bits
C.	the time taken to read a stored word after applying the address bits
D.	the time taken to erase a stored word after applying the address bits
Answer» C. the time taken to read a stored word after applying the address bits

370.	What are the typical values of tOE?
A.	10 to 20 ns for bipolar
B.	25 to 100 ns for nmos
C.	12 to 50 ns for cmos
D.	all of the mentioned
Answer» D. all of the mentioned

371.	Which of the following is not a type of memory?
A.	ram
B.	fprom
C.	eeprom
D.	rom
Answer» C. eeprom

372.	The chip by which both the operation of read and write is performed
A.	ram
B.	rom
C.	prom
D.	eprom
Answer» A. ram

374.	If a RAM chip has n address input lines then it can access memory locations upto
A.	2(n-1)
B.	2(n+1)
C.	2n
D.	22n
Answer» C. 2n

375.	The n-bit address is placed in the
A.	mbr
B.	mar
C.	ram
D.	rom
Answer» B. mar

376.	Which of the following control signals are selected for read and write operations in a RAM?
A.	data buffer
B.	chip select
C.	read and write
D.	memory
Answer» C. read and write

420+ Digital Electronics Solved MCQs

Fusing process is

The cell type used inside a PROM is

How many types of fuse technologies are used in PROMs?

Metal links are made up of

EPROM uses an array of

The EPROM was invented by

Address decoding for dynamic memory chip control may also be used for

Which of the following describes the action of storing a bit of data in a mask ROM?

The check sum method of testing a ROM

The initial values in all the cells of an EPROM is

To store 0 in such a cell, the floating point must be

The major disadvantage of RAM is?

Which one of the following is used for the fabrication of MOS EPROM?

How many addresses a MOS EPROM have?

To read from the memory, the select input and the power down/program input must be

ROMs retain data when

When a RAM module passes the checker board test it is

What is the difference between static RAM and dynamic RAM?

What is access time?

What are the typical values of tOE?

Which of the following is not a type of memory?

The chip by which both the operation of read and write is performed

RAM is also known as

If a RAM chip has n address input lines then it can access memory locations upto

The n-bit address is placed in the

Which of the following control signals are selected for read and write operations in a RAM?

Computers invariably use RAM for

How many types of RAMs are?

Static RAM employs

Dynamic RAM employs

Which one of the following is volatile in nature?

The magnetic core memories have been replaced by semiconductor RAMs, why?

The data written in flip-flop remains stored as long as

What is memory decoding?

The first step in the design of memory decoder is

How many address bits are required to select memory location in Memory decoder?

How memory expansion is done?

IC 4116 is organised as

To construct 16K * 4-bit memory, how many 4116 ICs are required?

How many 1024 * 1 RAM chips are required to construct a 1024 * 8 memory system?

How many 16K * 4 RAMs are required to achieve a memory with a capacity of 64K and a word length of 8 bits?

The full form of PLD is

PLD contains a large number of

Logic circuits can also be designed using

How many types of PLD is?

PAL refers to

Outputs of the AND gate in PLD is known as

PLA contains

PLA is used to implement

A PLA is similar to a ROM in concept except that

377.	Computers invariably use RAM for
A.	high complexity
B.	high resolution
C.	high speed main memory
D.	high flexibility
Answer» C. high speed main memory

379.	Static RAM employs
A.	bjt or mosfet
B.	fet or jfet
C.	capacitor or bjt
D.	bjt or mos
Answer» D. bjt or mos

380.	Dynamic RAM employs
A.	capacitor or mosfet
B.	fet or jfet
C.	capacitor or bjt
D.	bjt or mos
Answer» A. capacitor or mosfet

381.	Which one of the following is volatile in nature?
A.	rom
B.	erom
C.	prom
D.	ram
Answer» D. ram

382.	The magnetic core memories have been replaced by semiconductor RAMs, why?
A.	semiconductor rams are highly flexible
B.	semiconductor rams have highest storing capacity
C.	semiconductor rams are smaller in size
D.	all of the mentioned
Answer» D. all of the mentioned

383.	The data written in flip-flop remains stored as long as
A.	d.c. power is supplied
B.	d.c. power is removed
C.	a.c. power is supplied
D.	a.c. power is removed
Answer» A. d.c. power is supplied

384.	What is memory decoding?
A.	the process of memory ic used in a digital system is overloaded with data
B.	the process of memory ic used in a digital system is selected for the range of address assigned
C.	the process of memory ic used in a digital system is selected for the range of data assigned
D.	the process of memory ic used in a digital system is overloaded with data allocated in memory cell
Answer» B. the process of memory ic used in a digital system is selected for the range of address assigned

385.	The first step in the design of memory decoder is
A.	selection of a eprom
B.	selection of a ram
C.	address assignment
D.	data insertion
Answer» C. address assignment

386.	How many address bits are required to select memory location in Memory decoder?
A.	4 kb
B.	8 kb
C.	12 kb
D.	16 kb
Answer» C. 12 kb

387.	How memory expansion is done?
A.	by increasing the supply voltage of the memory ics
B.	by decreasing the supply voltage of the memory ics
C.	by connecting memory ics together
D.	by separating memory ics
Answer» C. by connecting memory ics together